製品概要

概要

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low R_DS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

特徴
Worldwide best FOM R_DS(on)*Q_g among silicon-based devices

Higher V_DSS rating

Higher dv/dt capability

Excellent switching performance

Easy to drive

100% avalanche tested
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注目ビデオ

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600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

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