システムの小型･高効率化に貢献するSTPOWER SiC MOSFET
STPOWER SiC（シリコン･カーバイド）MOSFETは、革新的なワイド･バンドギャップ（WBG）半導体のメリットを提供します。650V～1700Vの広い電圧範囲を備えたSTのSiC MOSFETは、面積抵抗がきわめて低く、優れたスイッチング性能を特徴とした最先端のテクノロジー･プラットフォームの1つです。
STPOWER SiC MOSFETの特徴
- 車載グレード（AG）対応
- きわめて優れた温度特性（max.TJ = 200°C）
- きわめて高いスイッチング周波数での動作ときわめて低いスイッチング損失
- 温度範囲全体にわたる低いオン抵抗
- 既存のICと互換性のあるゲート･ドライバ
- 実績のある高速かつ堅牢なボディ・ダイオード
STPOWER SiC MOSFETの製品ポートフォリオには、車載用および産業用アプリケーションの厳しい要件を満たすよう設計された最先端のパッケージ･オプション（HiP247、H2PAK-7、TO-247ロング･リード、STPAK、およびHU3PAK）が含まれています。
注目ビデオ
SiC can be applied to all types of energy handling
推奨コンテンツ
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SCTW100N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCT20N120H
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
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SCTW40N120G2VAG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
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SCTH40N120G2V-7
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package
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SCTW35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTH60N120G2-7
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
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SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCTH100N65G2-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package
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SCTWA90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
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SCTW60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
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SCTWA60N12G2-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
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SCTWA40N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
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SCTW60N120G2
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
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SCTWA40N12G24AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
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SCTWA60N120G2-4
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
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SCTWA60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
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SCTWA10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
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SCT10N120H
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCTH40N120G2V7AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT1000N170
Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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SCT1000N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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SCT20N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm, 43 A in an HiP247 package
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SCTWA50N120-4
Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package
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SCTW35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
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SCTWA20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
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SCTW70N120G2V
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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SCTWA40N120G2V-4
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
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SCTL90N65G2V
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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SCTWA70N120G2V-4
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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SCTWA40N120G2V
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
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SCTWA90N65G2V-4
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCT10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCT30N120H
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
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SCTW40N120G2V
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
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SCT20N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
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SCT10N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCTW90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTH90N65G2V-7
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
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SCTH70N120G2V-7
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package
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SCT20N170
Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCTH35N65G2V-7
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
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SCTWA35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
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SCTH35N65G2V-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA35N65G2V4AG
Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
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SCTWA35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
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SCTL35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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SCTWA35N65G2V-4
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
