システムの小型･高効率化に貢献するSTPOWER SiC MOSFET
STPOWER SiC（シリコン･カーバイド）MOSFETは、革新的なワイド･バンドギャップ（WBG）半導体のメリットを提供します。STのSiC（シリコン･カーバイド）MOSFETは、650V～1700Vの広い電圧範囲を備えており、単位面積あたりのオン抵抗がきわめて低く、優れたスイッチング性能を特徴とした最先端のテクノロジー･プラットフォームの1つです。
STPOWER SiC MOSFETの特徴
- 車載グレード（AG）対応
- きわめて優れた温度特性（最大TJ = 200℃）
- きわめて高いスイッチング周波数での動作ときわめて低いスイッチング損失
- 低いオン抵抗
- 既存のICと互換性のあるゲート･ドライバ
- 高速かつ堅牢なボディ･ダイオードを内蔵
STのSTPOWER SiC MOSFETの製品ポートフォリオには、車載用および産業用アプリケーションの厳しい要件を満たすよう設計された最先端のパッケージ･オプション（HiP247、H2PAK-7、TO-247ロング･リード、STPAK、およびHU3PAK）が含まれています。
 | 最新のパッケージング技術に加えて、STのSiC MOSFET（G3デバイスを含む）はベア･ダイとしても提供されます。WLBI（Wafer-Level Burn-In）およびKGD（Known Good Die）プロセスを含む最も厳格な車載要件に準拠するベア･ダイは、再構築ウエハまたはテープ & リール･パッケージングとして提供されます。 SiCに関するイノベーションとテクノロジーのページをご確認ください。 |
注目ビデオ
SiC can be applied to all types of energy handling
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