システムの小型･高効率化に貢献するSTPOWER SiCパワーMOSFET
SiC（シリコン･カーバイド）パワーMOSFETは、革新的なワイド･バンドギャップ（WBG）半導体のメリットを提供します。STのSiC（シリコン･カーバイド）MOSFETは、650V～2200Vの広い電圧範囲にて供給されます。最先端のテクノロジー･プラットフォームの1つで、優れたスイッチング性能およびきわめて低い単位面積当たりのオン抵抗を特徴とします。
SiCパワーMOSFETの特徴
- 車載グレード（AG）対応
- きわめて優れた温度特性（最大TJ = 200℃）
- きわめて高いスイッチング周波数での動作ときわめて低いスイッチング損失
- 低いオン抵抗
- 既存のICと互換性のあるゲート･ドライバ
- 高速かつ堅牢なボディ･ダイオードを内蔵
STのSiCパワーMOSFETの製品ポートフォリオには、車載用および産業用アプリケーションの厳しい要件を満たすよう設計された最先端のパッケージ･オプション（HiP247、H2PAK-7、TO-247ロング･リード、STPAK、およびHU3PAK）が含まれています。
最新のパッケージング技術に加えて、STのSiCパワーMOSFET（G3デバイスを含む）はベア･ダイとしても提供されます。WLBI（Wafer-Level Burn-In）およびKGD（Known Good Die）プロセスを含む厳しい車載要件に準拠するベア･ダイは、再構築ウェハまたはテープ & リール･パッケージングとして提供されます。
詳細については、SiCに関するイノベーション & テクノロジーのページをご覧ください。
注目ビデオ
SiC can be applied to all types of energy handling
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