Based on the advanced and innovative properties of wide bandgap materials, ST’s 650 and 1700 V silicon-carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures as well as excellent switching performance versus the best-in-class IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems.

The main features and benefits of our SiC MOSFETs include:

  • Very high temperature handling capability (max. TJ = 200 °C) leading to reduced PCB form factors (simplified thermal management) as well as improved system reliability
  • Significantly reduced switching losses (minimal variation versus temperature) resulting in more compact designs (with smaller passive components)
  • Low on-state resistance (20 mΩ typ. @ 25 °C for 650 V devices and 80 mΩ typ. @ 25 °C for 1200 V devices) resulting in higher system efficiency thanks to reduced cooling requirements
  • Simple to drive (cost-effective network driving)
  • Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems)

Our portfolio includes a wide range of operating voltages for Industrial and Automotive applications such as traction inverters, on board chargers & fast chargers, DC-DC converters, SMPS/high-end PFCs, auxiliary power supplies, and UPS/Solar/Welding.

New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET

ST has extended its portfolio of SiC MOSFETs with the introduction of the 22 mΩ typ (at 150 °C), 650 V SCTW100N65G2AG which increases the electrical efficiency of EVs and hybrid vehicles. When used in the EV/HEV main inverter, it increases the efficiency by up to 3% compared with an equivalent IGBT solution, translating into longer battery life and a lighter power unit. ST’s SiC MOSFETs also feature the industry’s highest junction-temperature rating of 200°C and show a very small variation of the on-state resistance even at high temperatures. This leads to higher system efficiency, which reduces cooling requirements and PCB form factors simplifying thermal management.
The new 650 V SiC MOSFET is currently sampling to lead customers and will soon complete the qualification to AEC-Q101.

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