Based on the advanced and innovative properties of wide bandgap materials, ST’s 650 and 1700 V silicon-carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures as well as excellent switching performance versus the best-in-class IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems.
The main features and benefits of our SiC MOSFETs include:
Very high temperature handling capability (max. TJ = 200 °C) leading to reduced PCB form factors (simplified thermal management) as well as improved system reliability
Significantly reduced switching losses (minimal variation versus temperature) resulting in more compact designs (with smaller passive components)
Low on-state resistance (20 mΩ typ. @ 25 °C for 650 V devices and 80 mΩ typ. @ 25 °C for 1200 V devices) resulting in higher system efficiency thanks to reduced cooling requirements
Simple to drive (cost-effective network driving)
Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems)
Our portfolio includes a wide range of operating voltages for Industrial and Automotive applications such as traction inverters, on board chargers & fast chargers, DC-DC converters, SMPS/high-end PFCs, auxiliary power supplies, and UPS/Solar/Welding.