Based on the advanced and innovative properties of wide bandgap materials, ST’s 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(on) * area combined with excellent switching performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance * area even at high temperatures and excellent switching performances versus the best-in-class IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems.
The main features and benefits of our SiC MOSFETs include:
Very high temperature handling capability (Tj max = 200 °C) leading to reduced PCB form factors (simplified thermal management) as well as improved system reliability
Significantly reduced switching losses (minimal variation versus temperature) resulting in more compact designs (with smaller passive components)
Low on-state resistance (20 mΩ typ @ 25 °C for 650 V device and 80 mΩ typ @ 25 °C for 1200 V device) resulting in higher system efficiency (reduced cooling requirements)
Simple to drive (cost-effective network driving)
Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems)