製品概要
概要
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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特徴
- AEC-Q101 qualified
- VCE(sat) = 1.52 V (typ.) @ IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Low thermal resistance
- Very fast and soft recovery antiparallel diode
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STGST200G65DTAG
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