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STGST200G65DTAG

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Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • All features

    • AEC-Q101 qualified
    • VCE(sat) = 1.52 V (typ.) @ IC = 200 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Low thermal resistance
    • Very fast and soft recovery antiparallel diode

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STMicroelectronics - STGST200G65DTAG

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