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SiCデバイス

 

SiC(シリコン・カーバイド): 革新的な高電圧スイッチングおよび整流を実現する最先端技術

STのSiC(シリコン・カーバイド)製品のポートフォリオには、業界最高クラスの200℃の接合部温度定格を特徴とするSTPOWER SiC MOSFET(650V~1700V)や、超低スイッチング損失および標準シリコン・ダイオードよりも順方向電圧(VF)が15%低いSTPOWER SiCダイオード(600V~1200V)が含まれており、効率的かつシンプルな設計を可能にします。詳細については、SiCに関するイノベーション & テクノロジーのページをご覧ください。 

以下をクリックすると、STのSiC製品に関するビデオをご視聴頂けます。また、ブログ記事もご覧頂けます

  
STPOWER SiC MOSFET
SiC MOSFET

主な特徴

  • 車載グレード(AG)対応
  • きわめて優れた温度特性(最大TJ = 200℃)
  • きわめて低いスイッチング損失(温度による変動の最小化)により、高いスイッチング周波数で動作可能
  • 動作温度範囲全体にわたる低いオン抵抗
  • シンプルなゲート駆動
  • 実績のある高速かつ堅牢なボディ・ダイオード

詳細はこちら

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