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Silicon carbide - The latest breakthrough in high-voltage switching and rectification

ST’s portfolio of silicon carbide devices incluses STPOWER SiC MOSFETs ranging from 650 to 1700 V with the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and STPOWER SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.

STPOWER SiC MOSFETs
SiC MOSFEts

Main characteristics:

  • Automotive Grade (AG) qualified devices
  • Very high temperature handling capability (max. TJ = 200 °C)
  • Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequency
  • Low on-state resistance over the temperature range
  • Simple to drive
  • Very fast and robust intrinsic body diode proved

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STPOWER SiC Diodes
SiC diodes

Main characteristics:

  • Very low forward conduction losses for increased efficiency
  • Low switching losses for reduced size and cost of the power converter
  • Soft switching behavior (low EMC impact), simplifying certification and speeding time-to market
  • High forward surge capability for increased robustness and reliability
  • High power integration (dual diodes) for reduced PCB form factor
  • High-temperature capability with Tj max = 175 °C
  • AEC-Q101-qualified and PPAP-capable automotive-grade SiC diodes 

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