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ニーズに応じて適切なSTPOWER MOSFETを以下よりお選びください。。



> 30V~350V NチャネルMOSFET

小型かつハイパワーなパッケージを幅広く提供する、STの中耐圧STripFET Nチャネル・パワーMOSFETポートフォリオです。

> 350V~700VスーパージャンクションMOSFET

標準および高速リカバリ・ボディ・ダイオード内蔵のスーパージャンクションMOSFETを特徴とする、STのMDmesh™ Nチャネル・スーパージャンクションMOSFETです。

> 700V~1700V高電圧および超高電圧MOSFET



新たなトレンチ・ゲート・デバイスによって拡充され、きわめて小さなフォーム・ファクタ・パッケージで提供されるSTのSTripFET PチャネルMOSFETです。


STの幅広いSTPOWER MOSFETポートフォリオには次のような特徴があります。

  • -100V~1700Vの耐圧範囲
  • スイッチング効率を高める専用制御ピンを備えた4ピンTO-247、大電流容量のH2PAK、革新的な表面実装型TO-LLリードレス、高さ1mmの表面実装型PowerFLATファミリ、ドレイン端子に大型の放熱パッドを採用することで優れた熱性能を実現した2mm x 2mm~8mm x 8mmの中耐圧高耐圧、および超高耐圧パワーMOSFETなど、30種類を超えるパッケージ・オプション
  • 最先端の厳しい効率要件に応じて改良されたゲート電荷量およびオン抵抗
  • 厳選された製品ライン向けの高速ボディ・ダイオード内蔵オプション
  • 車載用グレード対応パワーMOSFETの幅広いポートフォリオ
  • アプリケーション指向テクノロジー



Automotive MOSFETs in tiny 5x6 mm dual-side cooling package

ST has extended its offering of AEC-Q101 MOSFETs with the introduction of two 40 V devices in the advanced PowerFLAT™ 5x6 dual-side cooling (DSC) package with wettable flanks. The STLD200N4F6AG and STLD125N4F6AG, with a maximum on-resistance of 1.5 mΩ and 3.0 mΩ respectively, ensure high efficiency and help simplify system thermal management. The 0.8 mm-high PowerFLAT 5x6 DSC retains the footprint and thermally efficient bottom-side design of the standard wettable flank package, while it exposes the top-side source electrode to further enhance heat dissipation. This allows a higher current rating that increases power density, enabling designers to build smaller ECUs without trading off functionality, performance, or reliability.

Power MOSFET Basics

mosfet circuit
MOSFET circuit symbol

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It's a voltage controlled device with 3 terminals:

  • Gate (electrically insulated from the semiconductor)
  • Drain
  • Source

When a voltage applied between the Gate and the Source reaches a certain threshold (VGS(th) or threshold G-S voltage), the device is able to support current conduction between the Drain and the Source (ID or drain current).

mosfet structure
MOSFET simplified structure

When a voltage applied between the Gate and the Source is below VGS(th), the device will withstand a voltage up to BVDSS (or breakdown voltage).

MOSFETs can be used as a signal amplifier (linear operation) or as a switch in power applications.

MOSFET parameters

Like many other types of semiconductor power switches, the main parameters of a MOSFET, usually available in most datasheets, are:

  • RDS(on) (on-state resistance): electrical resistance when the device is set in on state. The lower is RDS(on), the lower is the conduction loss due to power dissipation when the current is flowing.
  • BVDSS (breakdown voltage): maximum drain-to-source voltage that the device is able to sustain when in off state.
  • QG (total gate charge): amount of electric charge required to the gate driver to turn on/off the device itself. QG impacts directly the efficiency (the lower, the better).

The product of RDS(on) and QG is known as the MOSFET Figure of Merit (FOM).

Other important parameters are intrinsic capacitances that can affect the switching times and voltage spikes, and body drain diode when device is used as power diode, like in synchronous free-wheeling operation mode.

mosfet parameters
Example of MOSFET datasheet parameters

Learn more about how to read MOSFET datasheet parameters thanks to our series of videos dedicated to "Power MOSFET datasheet parameters".

Main types of power MOSFETs

MOSFETs can be of different types, including:

N-channel enhancement-mode MOSFETs are the most popular type used in power switching circuits because of their low RDS(on) (on-state resistance) compared to P-channel MOSFETs.

mosfet main types
Overview of the main types of MOSFETs

Power MOSFET Applications

Power MOSFETs play an important role in all applications handling Power.

The main applications of high voltage MOSFETs include:

  • Switch Mode Power Supplies (SMPS)
  • Residential, commercial, architectural and street lighting
  • DC-DC converters
  • Motor control
  • Automotive applications

ST's high voltage MOSFET portfolio offers a broad range of breakdown voltages up to 1700 V, with low gate charge and low on-resistance, combined with state-of-the-art packaging. ST's MDmesh™ high-voltage MOSFETs technology has enhanced power-handling capability, resulting in high-efficiency solutions.

The main applications of low voltage MOSFETs include:

  • Switch, buck and synchronous rectification
  • Uninterruptible Power Supplies (UPS)
  • Small motor control
  • Switch Mode Power Supplies (SMPS)
  • Power-Over-Ethernet (PoE)
  • Solar inverters
  • Automotive applications

ST's low voltage MOSFET portfolio offers a broad range of breakdown voltages from -100 V to 120 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.