製品概要
概要
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad.
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特徴
- AEC-Q101 qualified
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) @ IC = 200 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Maximum junction temperature: TJ = 175 °C
- Dice on direct bond copper (DBC) substrate
- Isolation rating of 3400 Vrms/min
- UL recognition: UL 1557 file E81734
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STマイクロエレクトロニクス - STGSB200M65DF2AG
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| タイトル | バージョン | 更新日 |
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SPICE models (1)
| タイトル | バージョン | 更新日 | |||
|---|---|---|---|---|---|
| ZIP | 2.0 | 02 May 2022 | 02 May 2022 |