The increasing number of Electric Vehicles (EVs) on the roads brought about the need for more charging stations, including DC fast charging stations and CHAdeMO-compliant fast charging stations.
DC fast charging stations provide vehicles with level-3 charging, enabling a 100-kilometer driving range in just 10 to 12 minutes. While level-2 chargers supply AC power to the battery (which is then converted to DC power by the on-board charger), level-3 fast chargers directly deliver DC power, which significantly improves charging time.
DC charging stations currently target three main power levels: ≤ 50 kW for city use, 150 kW for highways, and 350 kW for supercars/trucks/buses. DC fast chargers usually include 20 kW subunits and then stack them up to create a higher power DC charging system. The ≤ 50kW power level category for city use shows the biggest growth according to market studies.
ST's offer for DC fast charger designs
ST provides a range of power discretes including Silicon-Carbide (SiC) and silicon power MOSFETs, diodes and protection devices (TVS), and isolated gate drivers, as well as high-performance STM32 microcontrollers to contribute to the development of high-efficiency, high-power density DC fast charging stations.
Our CAN transceivers are designed to boost connection between an electric car and the charging pile, and the power line transceivers and programmable Bluetooth Low Energy System on Chips ensure fast connection between the charging pile and the user interface.
DC Fast Charging Station block diagram
| Part Number | Description | |
|---|---|---|
| STEVAL-DPSTPFC1 | 3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V |
Quick view
Key Features
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3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V
Diodes and Rectifiers
| Part number | Description |
|---|---|
| STPSC40H12C | 1200 V, 40 A High Surge Silicon Carbide Power Schottky Diode |
MEMS and Sensors
| Part number | Description |
|---|---|
| AIS3624DQ | 3-axis accelerometer for non-safety automotive applications, ultra low power, SPI/I2C digital output, AEC-Q100 qualified |
| H3LIS100DL | Ultra low power 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor |
| H3LIS200DL | Ultra low power 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor, user-selectable full scales of ±100g/±200g |
| H3LIS331DL | Low power High-g 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor, user-selectable full scales of ±100g/±200g/±400g |
| LM135 | Precision Temperature Sensor |
| STLM20 | Analog temperature sensor, ultra-low current 2.4 V, high precision |
| STTS751 | 2.25 V low-voltage local digital temperature sensor |
Power Management
| Part number | Description |
|---|---|
| ALTAIR04-900 | Off-line all-primary-sensing switching regulator |
| ALTAIR05T-800 | Off-line all-primary-sensing switching regulator |
| L6985F | 38 V 500 mA synchronous step-down switching regulator with 30 uA quiescent current |
| L6986F | 38 V 1.5 A synchronous step-down switching regulator with 30 uA quiescent current |
| L7985 | 2A step-down switching regulator |
| L7986 | 3A step-down switching regulator |
| L7987 | 61 V 3 A asynchronous step-down switching regulator with adjustable current limitation |
| PM8834 | 4 A dual low side MOSFET driver |
| PM8841 | Single channel low-side gate driver |
| PM8851 | 1A Low Side Gate Driver with configurable asymmetric sink/source |
| ST1S40 | 3A DC step-down switching regulator |
| ST1S50 | 4A Monolithic synchronous step-down converter with high efficiency at light load |
| STGAP1AS | Automotive galvanically isolated single gate driver |
Power Transistors
| Part number | Description |
|---|---|
| SCTW100N65G2AG | Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package |
| STB6N80K5 | N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package |
| STB80N20M5 | N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package |
| STB8N65M5 | N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in D2PAK package |
| STB8N90K5 | N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package |
| STGW60H65DFB-4 | Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
| STW88N65M5-4 | N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package |
Protection Devices
Thyristors (SCR) and AC Switches
| Part number | Description |
|---|---|
| BTW69-1200N | 50 A 1200 V SCR Thyristor in non-insulated TOP3 |
| TN2540 | Standard 25 A SCRs |
| TN5050H-12WY | 50A 1200V automotive grade SCR |
