STGD4M65DF2

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製品概要

概要

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V_CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

特徴
6 µs of short-circuit withstand time

V_CE(sat) = 1.6 V (typ.) @ I_C = 4 A

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode
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注目ビデオ

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1200 V IGBT M series

Optimized for hard-switching applications up to 20 kHz

Watch the video (04:34)

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