The right solution for multicarrier base stations and industrial-scientific-medical applications
Based on our innovative IDCH technology, the RF2L16180CB4 expands the range of applications, giving power RF designers a competitive edge for cost-efficient solutions in addition to superior performance in multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications with frequencies from 1300 to 1600 MHz.
Combining a shorter conduction channel length with a high power density, this 180 W, 28 V internally matched LDMOS transistor comes with 4 leads that can be configured as single ended, 180-degree push-pull or 90-degree hybrid or Doherty with the proper external matching network.
Key features of RF2L16180CB4
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched for ease of use
- Optimized for Doherty applications
- Large positive and negative gate-source voltage range for improved class C operation
- Complies with European Directive 2002/95/EC
STMicroelectronics Introduces New RF LDMOS Power Transistors
Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a short conduction-channel length with a high breakdown voltage. These characteristics permit a cost-effective solution with low power consumption and high reliability.
28/32 V LDMOS
New IDCH power RF LDMOS technology gives superior performance at frequencies up to 4 GHz.