SCT055HU65G3AG automotive-grade silicon carbide power MOSFET 650V-30A 58 mOhm typ. in an HU3PAK package

650V automotive-grade silicon-carbide STPOWER MOSFET in an SMD HU3PAK package with top side cooling

Combining the intrinsic features of ST's 3rd-generation STPOWER SiC technology with the high thermal performance of the top side cooling package, the SCT055HU65G3AG is ideal for OBC and DC/DC converters in electric vehicle applications, and power conversion for industrial. 

The SCT055HU65G3AG features a very low RDS(on) over the entire temperature range combined with low capacitance and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Furthermore, the advanced surface mounted (SMD) HU3PAK package with top side cooling allows a smaller form factor, higher design flexibility and better thermal performance while increasing the power density.

Thanks to the additional Kelvin-source pin, designers can achieve better efficiency due to reduced turn-on/off switching losses.

For more info on the HU3pak package, visit the page Top-side cooling SMD packages for automotive applications.

Key features

  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High-speed switching performance
  • Very fast and robust intrinsic body diode
  • Source sensing pin for increased efficiency

Recommended resources

 
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pdf tn1378 hu3pak

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 SiC power modules for EV webinar
    In this 1-hour on-demand webinar, discover why silicon-carbide (SiC) technology can dramatically reduce the total cost of ownership in electric vehicle (EV) applications such as traction inverters, DC/DC converters and on-board chargers (OBC).