Silicon Carbide (SiC)

Silicon Carbide SiC

Silicon Carbide (SiC) for a more sustainable future

Following several years of intense R&D surrounding silicon carbide, ST introduced the first SiC diodes in 2004, began producing the first SiC MOSFETs in 2009, and commenced mass production in 2014. Recently, ST has introduced 1200V MOSFET and power Schottky diode products to complement the 650V versions.

ST has developed a reliable and robust SiC supply chain and continues to improve the quality of the material and manufacturing processes to deliver competitive advantages and satisfy the ever-growing supply and performance requirements surrounding EVs, solar installationsindustrial motor drives, and power supplies.

Advantages of SiC power devices

Specific advantages for electric vehicles:

  • 20% reduction in the total cost of ownership
  • Longer driving range for e-cars (> 600 km with SiC)
  • E-Car weight reduction (150-200 kg on an average EV)
  • Faster charging and less stress on batteries

Higher performance and voltage operation

  • 50% lower losses at five times the frequency
  • Short recovery time of MOSFET intrinsic body diode 
  • Faster switching capability and increased robustness compared to silicon devices
  • Unrivaled specific on-resistance
  • Improved energy efficiency
  • High thermal conductivity

Higher operating frequency

  • Lower switching losses, excellent diode switching performance
  • Smaller, lighter systems

Safer and higher operating temperatures

  • Operating temperature up to 200°C junction (limited only by the package)
  • Reduces cooling requirements, therefore improving miniaturization and lifetime

Easy to drive

  • Fully compatible with standard gate drivers
  • Simpler design for reduced BOM and shorter time to market<

Read our whitepaper and learn how the unique properties of wide bandgap materials improve application performance.

What exactly is silicon carbide (SiC)?

Silicon carbide (SiC) is a wide bandgap material with many intrinsic advantages over conventional silicon.  MOSFETs manufactured in SiC technology can operate at far higher temperatures and higher voltages without compromising on-resistance. They can also work at higher switching frequencies, allowing less bulky passive components.

Comparison of the electrical and thermal properties of silicon, silicon carbide, and gallium nitride

To find out more about Silicon Carbide technology watch the video




silicon carbide vs silicon

SiC のメリット

sic power schottky diode and sic mosfet


  • 極めて低い電力損失
  • MOSFETはSiCボディ・ダイオードを内蔵 (4象限動作に対応)
  • シリコンに比べて高速・堅牢
  • より小さなチップ面積で同等のブレークダウン電圧を実現
  • 高いエネルギー効率
  • 高い熱伝導率


  • 低いスイッチング損失と、優れたダイオードのスイッチング特性
  • システムの小型化および軽量化が可能


  • 200°Cまでの接合部温度で動作
  • 冷却構造を小型化できるため、システムの軽量化と長寿命化が可能


  • 標準的なゲート・ドライバを使用可能
  • 回路設計を簡略化





SiC Silicon Carbide wafers

SiCテクノロジー 解説ビデオ

SiC Silicon Carbide video