The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -40 °C to 175 °C
- ECOPACK®2 compliant
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Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|TO-247 long leads||Industrial||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from Distributors||Order from ST||Marketing Status||Package||Packing Type||Junction Temperature (°C) (max)||ECCN (US)||Country of Origin||Budgetary Price (US$)*/Qty|
|STPSC10H12CWL|| 3 distributors |
Distributor availability ofSTPSC10H12CWL
Distributor reported inventory date: 2020-07-09
|Buy now|| |
|TO-247 long leads||Tube||175||EAR99||PHILIPPINES||2.701 / 100|
Unit Price (US$)2.701
TO-247 long leads
Junction Temperature (°C) (max)
Country of Origin