STPSC20H12CWY

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20 A 1200 V power Schottky silicon carbide diode

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Product overview

Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

  • All features

    • AEC-Q101 qualified
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high-voltage periphery
    • PPAP capable
    • Operating Tj from -40 °C to 175 °C
    • ECOPACK2 compliant

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC20H12CWY

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC20H12CWY
Active
HIP247 Automotive Ecopack2

STPSC20H12CWY

Package:

HIP247

Material Declaration**:

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Marketing Status

Active

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STPSC20H12CWY
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Part Number:

STPSC20H12CWY

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Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors