This device is an ultrafast diode based on 600 V Pt doping planar technology.
It can be used in hard switching conditions for power factor corrections. Its extremely low reverse recovery current reduces the switching power losses of the MOSFET and thus increases the overall application efficiency.
This diode is also intended for applications in power supplies and power conversions systems, and all sorts of power switching.
- Ultrafast recovery
- Low reverse recovery current
- Low thermal resistance
- Higher frequency operation
- Reduces switching and conduction losses
- Insulated TO-220FPAC:
- Insulating voltage = 2000 VRMS
- Package capacitance = 12 pF
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