ST offers the STGAP series of isolated MOSFET and IGBT gate drivers that provide galvanic isolation between the input section, which connects to the control part of the system, and the MOSFET or IGBT being driven. Galvanic isolation is attained using a high-voltage, on-chip, micro transformer that ensures commands and diagnostic information are reliably transferred to and from the floating – with respect to ground – section of the circuit.
STGAP galvanically isolated gate drivers are extremely flexible as they provide a large number of parameters that can be adjusted to best match the selected MOSFET or IGBT and system requirements. They also provide extensive diagnostic features to help enhance system robustness and reliability. Evaluation hardware, software and technical documentation are available to help minimize time to market.
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The STGAP4S is a galvanically isolated single gate driver for IGBTs and SiC MOSFETs with advanced protection, configuration and diagnostic features. The architecture of the STGAP4S isolates the channel gate driving from the control and the low voltage interface circuitry through true galvanic isolation.
The STGAP3S gate driver for SIC MOSFETs and IGBT devices combines ST’s latest galvanic isolation technology with optimized desaturation protection and flexible Miller-clamp architecture.