Gallium nitride (GaN) is revolutionizing the power engineering world by enabling high speed, increased efficiency and higher power density never before possible with silicon MOSFETs. Integrating GaN transistors and gate drivers, our advanced MasterGaN systems-in-package offer high efficiency due to their optimized gate drive layout, high power density and increased switching frequency due to minimal parasitic effects.
The GaN drivers devices are half-bridge gate drivers for enhancement mode GaN FETs or N-channel power MOSFET.
The high voltage power converters is enriched by the introduction of GaN HEMT (high-electron-mobility transistor) technology. The use of a GaN transistor leads to higher power density, higher efficiency, higher switching frequency with consequent smaller and lighter PCB, simplifying the design of SMPS and improving the overall performances.
Advanced quasi-resonant offline high voltage converter with E-mode GaN HEMT
DC/DC resonant converter for industrial applications using MasterGaN1
600V half-bridge driver with two GaN power transistors in one package
600V half-bridge driver with asymmetrical 225mΩ+450mΩ GaN HEMTs
Half-bridge gate driver for GaN FETs with high current capability, short propagation delay and safety features
MasterGaN, ST's world first solution to integrate Si driver and 2 GaN power transistors in 1 package
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