Product overview
Description
The devices are NPN transistors manufactured using new \"PB-HCD\" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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All features
- Very low collector-emitter saturation voltage
- Fast-switching speed
- High current gain characteristic
EDA Symbols, Footprints and 3D Models
The STMicroelectronics team - 2STL1360
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