Product overview
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
-
All features
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Low spread of dynamic parameters
- Very high switching speed
Recommended for you
EDA Symbols, Footprints and 3D Models
STMicroelectronics - BUL741FP
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
