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IRF630FP

Obsolete
Design Win

N-Channel 200V - 0.35 Ohm - 9A - TO-220FP MESH OVERLAY(TM) MOSFET

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Product overview

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

  • All features

    • Extremely high dv/dt capability
    • Very low intrinsic capacitance
    • Gate charge minimized

EDA Symbols, Footprints and 3D Models

STMicroelectronics - IRF630FP

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3D models