SCTWA60N120G2AG

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Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • All features

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Very high operating junction temperature capability (TJ = 200 °C)

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STMicroelectronics - SCTWA60N120G2AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTWA60N120G2AG
Active
HIP247 long leads Automotive Ecopack2

SCTWA60N120G2AG

Package:

HIP247 long leads

Material Declaration**:

Marketing Status

Active

Package

HIP247 long leads

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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SCTWA60N120G2AG Available at distributors

Distributor availability of SCTWA60N120G2AG

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Active
EAR99 NEC Tube HIP247 long leads - - CHINA

SCTWA60N120G2AG Active

Package:
HIP247 long leads
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

SCTWA60N120G2AG

ECCN (EU):

NEC

Packing Type:

Tube

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors