Product overview
Description
These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
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All features
- Low on voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultra-fast recovery antiparallel diode
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB10NC60HDT4
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