Product overview
Description
This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz).
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All features
- Improved Eoffat elevated temperature
- Minimal tail current
- Low conduction losses
EDA Symbols, Footprints and 3D Models
The STMicroelectronics team - STGF35HF60W
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