STGWA20M65DF2

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Trench gate field-stop IGBT M series, 650 V 20 A low loss

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

    Key Features

    • High short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 20 A
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

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Budgetary Price (US$)*/Qty
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STGWA20M65DF2 TO-247 long leads Tube
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EAR99 CHINA Trench gate field-stop IGBT M series, 650 V 20 A low loss Get sample Check Availability

Distributor availability ofSTGWA20M65DF2

Distributor Name
Region Stock Min. Order Third party link
MOUSER WORLDWIDE 560 1 Order Now

Distributor reported inventory date: 2020-06-02

Distributor Name

MOUSER

Stock

560

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2020-06-02

STGWA20M65DF2

Package

TO-247 long leads

Packing Type

Tube

Budgetary Price (US$)*/Qty

Distributor availability ofSTGWA20M65DF2

Distributor Name
Region Stock Min. Order Third party link
MOUSER WORLDWIDE 560 1 Order Now

Distributor reported inventory date: 2020-06-02

Distributor Name

MOUSER

Stock

560

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2020-06-02

Marketing Status

Active

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT M series, 650 V 20 A low loss

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS11376
      Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT
      3.0
      544.32 KB
      PDF
      DS11376

      Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

    • Description Version Size Action
      AN4694
      EMC design guides for motor control applications
      1.0
      2.13 MB
      PDF
      AN4544
      IGBT datasheet tutorial
      1.1
      2.4 MB
      PDF
      AN4694

      EMC design guides for motor control applications

      AN4544

      IGBT datasheet tutorial

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STGWA20M65DF2 PSpice model 1.0
      2.64 KB
      ZIP

      STGWA20M65DF2 PSpice model

Publications and Collaterals

    • Description Version Size Action
      650V HB series IGBTs; Innovative 4-lead package 1.0
      1.67 MB
      PDF
      ST IGBT FINDER: The new app for Android and iOS 1.0
      787.04 KB
      PDF

      650V HB series IGBTs; Innovative 4-lead package

      ST IGBT FINDER: The new app for Android and iOS

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      Electric vehicle (EV) ecosystem 1.1
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      Electric vehicle (EV) ecosystem

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGWA20M65DF2
Active
Trench gate field-stop IGBT M series, 650 V 20 A low loss TO-247 long leads Industrial Ecopack2

STGWA20M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Material Declaration**:

PDF XML

Marketing Status

Active

General Description

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Package

TO-247 long leads

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.