Product overview
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All features
- Maximum junction temperature: TJ = 175 °C
- High short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA20M65DF2
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All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 19 Apr 2016 | 19 Apr 2016 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGWA20M65DF2 | NRND | Trench gate field-stop, 650 V, 20 A low-loss M series IGBT in a TO-247 long leads package | TO-247 long leads | Industrial | Ecopack2 | - | - | |
STGWA20M65DF2
Package:
Trench gate field-stop, 650 V, 20 A low-loss M series IGBT in a TO-247 long leads packageMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGWA20M65DF2 | | | distributors No availability of distributors reported, please contact our sales office |
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STGWA20M65DF2 NRND
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors