STGWA20M65DF2   Product is in volume production.

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Download Datasheet

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Key Features

  • High short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 20 A
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode

Resources

Technical Documentation

Product Specifications
Description Version Size
DS11376 DS11376: Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT 3.0 544.32 KB
Application Notes
Description Version Size
AN4694 AN4694: EMC design guides for motor control applications 1.0 2.13 MB
AN4544 AN4544: IGBT datasheet tutorial 1.1 2.4 MB

HW Model, CAD Libraries & SVD

HW Model, CAD Libraries & SVD
Description Version Size
STGWA20M65DF2 PSpice model 1.0 2.64 KB

Publications and Collaterals

Flyers
Description Version Size
650V HB series IGBTs; Innovative 4-lead package 1.0 1.67 MB
ST IGBT Finder, get the right IGBT for your application with a touch of your screen 1.0 357.76 KB
Brochures
Description Version Size
Brochure Power management guide 10.2018 4.42 MB
Electric vehicle (EV) ecosystem 1.1 1.28 MB

Tools and Software

Development Tools
Software Development Tools
Support & Community

Featured Videos

See All
Getting started with eDesignSuite Getting started with eDesignSuite
1200 V SiC MOSFETs
1200 V IGBT M series

Sample & Buy

Part Number Package Packing Type Marketing Status Unit Price (US$) * Quantity ECCN (US) Country of Origin General Description More info Order from ST Order from Distributors
STGWA20M65DF2 TO-247 long leads Tube Active - - EAR99 CHINA Trench gate field-stop IGBT M series, 650 V 20 A low loss MORE INFO No availability reported, please contact our Sales office
test

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Quality & Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGWA20M65DF2 ActiveTrench gate field-stop IGBT M series, 650 V 20 A low lossTO-247 long leadsIndustrialEcopack2 0 0
test

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

All rights reserved © 2019 STMicroelectronics
Terms of use | Sales Terms & Conditions | Privacy Policy | Contacts

×