Product overview
Description
This device is an N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
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All features
- Outstanding dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitances
- Very low RDS(on)
- Extremely low trr
Featured Videos
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STI5N52U
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