STL128DN

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High voltage fast-switching NPN power transistor

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Product overview

Description

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

  • All features

    • Integrated antiparallel collector-emitter diode
    • High voltage capability
    • Minimum lot-to-lot spread for reliable operation
    • Low spread of dynamic parameters
    • Large RBSOA
    • Very high switching speed

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STL128DN

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STLD128DNT4
Active
DPAK Industrial Ecopack2

STLD128DNT4

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DPAK

Material Declaration**:

Marketing Status

Active

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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