Product overview
Description
This device is a dual N-channel Power MOSFET which utilizes the latest generation of design rules for ST's proprietary STripFET™ V and STripFET™ VI DeepGATE™ technology. The lowest available RDS(on)* Qg in this chip scale package renders the device suitable for the most demanding DC-DC converter applications, where high power density is required.
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All features
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL60N32N3LL
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