Product overview
Description
This product is an N-channel Power MOSFET that utilizes the 5th generation of design rules for ST’s proprietary STripFET™ technology. The lowest available RDS(on)* Qg, in SO-8 package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.
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All features
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS13N3LLH5
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