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ST’s 28/32 V LDMOS transistors targeting operation up to 2 GHz feature a significant improvement in terms of RF performance (+4 dB gain, +15% efficiency), ruggedness (>20:1 VSWR) and reliability compared to the previous LDMOS generation. Available in both ceramic packages and in the cost-effective PowerSO-10RF plastic package, they are ideal for applications such as repeaters, base stations, government wideband communications and L-band satellite uplink equipment.

Key features

  • Frequency: from HF to 2 GHz
  • Breakdown voltage BVDSS: >80 V
  • Supply voltage: up to 32 V
  • Output power: up to 150 W
  • Gain: 20 dB
  • Efficiency: 65%
  • Ruggedness: >20:1 VSWR all phases (CW)
  • Available in die form

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