PD55035STR1-E

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35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

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Product overview

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.

  • All features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V
    • New RF plastic package

EDA Symbols, Footprints and 3D Models

STMicroelectronics - PD55035STR1-E

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
PD55035STR1-E
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PowerSO-10RF (straight lead) Industrial Ecopack2

PD55035STR1-E

Package:

PowerSO-10RF (straight lead)

Material Declaration**:

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Marketing Status

Active

Package

PowerSO-10RF (straight lead)

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors