Product overview
Description
The SD2951-10 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS(ON) than the industry standard, with 40% higher PSAT than ST's SD2931-10 device. The SD2951-10 is housed in the low thermal non-pedestal package, offering 25% lower thermal resistance than the industry standard, thus rendering it the "best-in-class" transistor for ISM applications, where reliability and ruggedness are critical factors.
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All features
- Excellent thermal stability
- Common source configuration
- POUT = 250 W with 14 dB gain @ 175 MHz
- Low RDS(on)
- Load mismatch 65:1 all phases @ 250 W - 50 V - 175 MHz / 1 msec - 10%
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SD2951-10
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