800 V STPOWER MDmesh K6 series

800 V STPOWER MDmesh K6 superjunction MOSFETs in DPAK package

Industry best on-resistance per area enabling higher power density and more compact solutions

The 800 V STPOWER MDmesh K6 series sets a new benchmark in terms of best-in-class performance and remarkable ease of use.

This latest very high voltage superjunction technology delivers best-in-class RDS(on) in a DPAK package to help designers increase system power density in more compact solutions. In combination with very low Qg, these devices achieve higher frequency operation with lower switching losses.

The current products in DPAK package in full production are STD80N240K6 (RDS(on) max. 220mΩ), STD80N340K6 (RDS(on) max. 340mΩ), and STD80N450K6 (RDS(on) max. 450mΩ), with more products coming.

The full 800 V STPOWER MDmesh K6 portfolio includes a range of other devices in various packages.

This product family is ideal for lighting applications such as LED drivers and HID lamps, and for SMPS using flyback topology in adapters and flat-panel televisions.

Key features

  • Worldwide best RDS(on) x area
  • Worldwide best figure of merit
  • Ultralow gate charge
  • 100% avalanche tested
  • Zener-protected

Application examples

  • LED drivers
  • HID lamps
  • Adapters
  • Flat panel televisions

Recommended resources

pdf superjunction mosfets

MDmesh K6 technology featuring industry topping on-resistance per area enables higher power density and more compact solutions

pdf power management guide

Download the latest edition with the solutions for your power management system design.

mosfet finder

The STPOWER MOSFET Finder application for Android and iOS offers easy search functionality across our online product portfolio. The parametric search engine allows the user to rapidly identify the right product that best fits their application. This app is available on Google Play, App Store and Wandoujia.

flyback mosfet

Choosing the right flyback MOSFET is critical in LED drivers, chargers, and other applications based on flyback converters to achieve higher efficiency and power density and reduce equipment size and weight. The latest improvements in device geometry and fabrication processes lower drain-source on-resistance per unit of silicon area to contribute significantly to achieving these requirements.