Enhance performance and simplify design in high-power applications
Learn how STGAP’s on-chip galvanic isolation increases robustness, noise immunity and design flexibility in high-power MOSFET and IGBT applications.
During this one-hour video, we introduce the STGAP family, our lineup of isolated MOSFET and IGBT gate drivers providing galvanic isolation between the input section and the transistors. Galvanic isolation is attained using a high-voltage, on-chip, micro transformer that ensures commands and diagnostic information are reliably transferred to and from the floating (with respect to ground) section of the circuit.
STGAP galvanically isolated gate drivers are extremely flexible as they provide a large number of parameters that can be adjusted to best match the selected MOSFET or IGBT and system requirements. They also provide extensive diagnostic features to help enhance system robustness and reliability. The result is a compact, robust and highly noise-immune IGBT/MOSFET/SiC MOSFET driver offering enhanced design flexibility for high power applications such as inverters for electrical vehicles and electrical vehicle charging stations as well as inverters for harsh industrial environments.
Evaluation hardware, software and technical documentation are also available to help minimize time to market.
You will learn:
- the fundamentals of galvanic isolation technology
- about ST's portfolio of isolated gate drivers
- the differences between the STGAP1x and STGAP2x
- why STGAP is the perfect driver for Silicon Carbide (SiC) MOSFETs
|Luca Bartolomeo is the head of the Industrial and Power Conversion marketing team for the Americas and is a member of STMicroelectronics' Technical Staff. Joining ST in 2006 as an FAE for power conversion, he has authored or co-authored over 20 technical papers on engineering topics published in international conferences and journals. He also occasionally serves as a technical program committee member during international conferences. Luca holds a PhD in Robotics.|