Lower leakage temperature coefficient makes it easy
ST field-effect rectifier diodes (FERD) help improve designs with new versions focusing on trade-off upgrades. The design of the FERDs has allowed both a decrease in the voltage drop and a decrease in the leakage current temperature coefficient. As a result, the runaway safety margin is improved and maybe beyond the typical safety margin of Schottky barrier diodes.
Depending on the targeted application and its voltage, developers can now choose the best compromise in terms of forward voltage drop (VF) and leakage current (IR):
- ‘U’ very low forward voltage drop (VF)
- ‘L’ low forward voltage drop (VF)
- ‘M’ & ‘SM’ medium forward voltage drop with optimized leakage current (IR)
- ‘H’ & ‘S’ low leakage current at high temperatures (low IR)
A 30 A, 100 V device now fits in a DPAK package!
For a given package size, our advanced FERD technology allows better density and more efficiency than Schottky barrier devices. The most recent 60 and 100V devices are available in through-hole as well as PowerFLAT™, D²PAK and DPAK versions.
Smaller and more optimized packages allow the design of more compact chargers, adapters and SMPS with less power losses, therefore less heat-sinking.