STPSC10C065-Y

Obsolete
Design Win

Automotive 650 V, 10 A Silicon Carbide Power Schottky Diode

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Product overview

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.

  • All features

    • AEC-Q101 qualified
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • Recommended to PFC applications
    • PPAP capable
    • ECOPACK®2 compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC10C065-Y

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