STPSC12H065

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Design Win

650 V, 12 A High Surge Silicon Carbide Power Schottky Diode

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Product overview

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

  • All features

    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Dedicated to PFC applications
    • High forward surge capability

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC12H065

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC12H065D
Active
TO-220AC Industrial Ecopack2

STPSC12H065D

Package:

TO-220AC

Material Declaration**:

Marketing Status

Active

Package

TO-220AC

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STPSC12H065D
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STPSC12H065D Active

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Part Number:

STPSC12H065D

Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors