Product overview
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
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All features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STPSC12H065
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All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 12.0 | 05 Dec 2025 | 05 Dec 2025 |
SIMPLIS models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 23 May 2025 | 23 May 2025 |