STPSC20H065C   Product is in volume production.

650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode

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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability

Resources

Technical Documentation

Product Specifications
Description Version Size
DS9227 DS9227: 650 V power Schottky silicon carbide diode 3.0 164.82 KB
Application Notes
Description Version Size
AN4242 AN4242: New generation of 650 V SiC diodes 2.0 4.75 MB
AN5088 AN5088: Rectifiers thermal management, handling and mounting recommendations 2.0 2.32 MB
Technical Notes & Articles
Description Version Size
TN1173 TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches 5.0 1.04 MB

HW Model, CAD Libraries & SVD

HW Model, CAD Libraries & SVD
Description Version Size
Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb) 6.0 99.21 KB

Presentations & Training Material

Presentations
Description Version Size
Silicon-carbide diode product presentation 1.0 1,022.79 KB

Publications and Collaterals

Flyers
Description Version Size
1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages 1.0 748.77 KB
1200V Silicon Carbide diodes – from 2A to 40A – in through-hole and surface-mount packages (1-page summary) 1.0 258.19 KB
Automotive-grade SiC diodes with very low forward voltage drop 1.0 1.33 MB
Industrial-grade SiC diodes - 650V and low VF - to boost the performance of power converters 2.0 958.23 KB
ST Diodes Finder : the new app for Android and iOS 2.0 1.46 MB
Silicon-carbide diodes 1.0 1.42 MB
Selection Guides
Description Version Size
Diodes and rectifiers selection guide 2.0 815.09 KB
Brochures
Description Version Size
Brochure Power management guide 10.2018 4.42 MB
Electric vehicle (EV) ecosystem 1.1 1.28 MB
Products and solutions for solar energy 1.0 1.29 MB
Conference Papers
Description Version Size
Wide bandgap materials: revolution in automotive power electronics 1.0 792.49 KB

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Sample & Buy

Part Number Marketing Status Unit Price (US$) * Quantity Package Packing Type Junction Temperature (°C) (max) ECCN (US) Country of Origin More info Order from ST Order from Distributors
STPSC20H065CW Active 4.5075 10 TO-247 Tube 175 EAR99 CHINA MORE INFO Buy Direct Add to cart DISTRIBUTOR AVAILABILITY
STPSC20H065CT Active 4.2703 10 TO-220AB Tube 175 EAR99 CHINA MORE INFO No availability reported, please contact our Sales office
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Quality & Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC20H065CW ActiveTO-247IndustrialEcopack2 0 0
STPSC20H065CT ActiveTO-220ABIndustrialEcopack2 0 0
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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