Product overview
Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC2H065-Y SiC diode will boost performance in hard switching conditions.
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All features
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- PPAP capable
- ECOPACK2 compliant component
- VRRM guaranteed from -40 to 175 °C
- Power efficient product
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STPSC2H065-Y
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| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 06 Dec 2019 | 06 Dec 2019 |