The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost performance in hard switching conditions.
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK2 compliant component
- Power efficient product
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Distributor availability ofSTPSC2H065B-TR
Distributor reported inventory date: 2020-08-10
|EAR99||NEC||Tape And Reel||DPAK||-||-||175||CHINA||0.5 / 100||