This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC4H065DLF in PowerFLAT™8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as Telecom & Network, Industrial or Renewable energy domains.
- Less-than-1mm height package
- High creepage package
- No or negligible reverse recovery
- Temperature independent switching behavior
- High forward surge capability
- Low drop forward voltage
- Power efficient product
- ECOPACK®2 compliant component
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 8x8 HV||Industrial||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.