The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications.
Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
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|Part Number||Marketing Status||Unit Price (US$) *||Quantity||Package||Packing Type||Junction Temperature (°C) (max)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|STPSC6C065DY||Active : Product is in volume production||1.1004||100||TO-220AC||Tube||175||EAR99||CHINA||MORE INFO||No availability reported, please contact our Sales office|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.