Product overview
Description
This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRR(6.5 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the VF/QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.
The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.
Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.
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All features
- High voltage rectifier
- Tandem diodes in series
- Very low switching losses
- Insulated device with internal ceramic
- Equal thermal conditions for both 300 V diodes
- Static and dynamic equilibrium of internal diodes are warranted by design
- Insulated package:
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STTH12T06
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All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 12.0 | 06 Feb 2026 | 06 Feb 2026 |
SIMPLIS models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 23 May 2025 | 23 May 2025 |