This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRR(6 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the VF/QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.
The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.
Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.
- High voltage rectifier
- Tandem diodes in series
- Very low switching losses
- Insulated device with internal ceramic
- Equal thermal conditions for both 300 V diodes
- Static and dynamic equilibrium of internal diodes are warranted by design
- Insulated package:
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
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Sample & Buy
|Part Number||Order from Distributors||Order from ST||Marketing Status||Package||Packing Type||Junction Temperature (°C) (max)||ECCN (US)||Country of Origin||Budgetary Price (US$)*/Qty|
|STTH8T06DI||1 distributors||Get sample|| |
|TO-220AC Ins||Tube||175||EAR99||CHINA||0.766 / 100|
Unit Price (US$)0.766
Junction Temperature (°C) (max)
Country of Origin