The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.
The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently.
The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage.
The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling.
Both controlling and power signals are available on pin strip for easy connection to customer's board.
|DB3345: High-voltage evaluation board for the PWD13F60 full-bridge high density power driver||2.0||456 KB|
|EVALPWD13F60R4 gerber files||1.0||129 KB|
|X-NUCLEO expansion boards motor control - Selection guide||1.2||263 KB|
|Products and solutions for Smart industry||3.0||2 MB|
|Evaluation products license agreement||1.6||74 KB|
|Part Number||Core Product||Marketing Status||Unit Price (US$) *||Quantity||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|EVALPWD13F60||PWD13F60||Active : Product is in volume production||19.5||1||EAR99||-||MORE INFO||DISTRIBUTOR AVAILABILITY|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||WEEE Compliant||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.