STEVAL-G0707TOCB
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Design Win
Evaluation board for half-bridge with SGT070R70HTO, 53 mOhm typ., 26 A e-mode PowerGaN transistor

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Product overview

Description

The STEVAL-G0707TOCB is designed for evaluating the electrical and thermal characteristics of the SGT070R70HTO 700-V e-mode PowerGaN transistor using the isolated gate driver STGAP2GS.

The half-bridge configuration enables the emulation of buck, boost, PFC, and inverter topologies with a dedicated external controller and filtering.

The STEVAL-G0707TOCB is optimized to reduce voltage undershoots an overshoot while ensuring fast switching times.

As the PowerGaN switches are mounted on the top side of the FR4 PCB, it facilitates the evaluation of different thermal interface materials (TIM), enabling the PowerGaN to deliver maximum power with an efficient thermal interface.

The SGT070R70HTO is a 53 mΩ typ, 700 V, 26 A e-mode GaN power transistor combined with bottom side cooling packaging technology. This device provides low conduction losses, high current capability, and ultrafast switching operation, enabling high-power density and efficiency performance.

The PowerGaN transistor is controlled by the STGAP2GS, a galvanically isolated 3 A single gate driver for enhancement-mode GaN FETs. The board allows independent optimization of turn-on and turns-off by using dedicated gate resistors.

  • All features

    • Half-bridge topology featuring 630 V peak voltage
    • Equipped with 700 V, 53 mΩ typ., 26 A, e-mode PowerGaN transistor
    • Bottom solder mask aperture for high heat-sink performance
    • 8° C/W junction-to-heatsink thermal resistance to evaluate large power topologies
    • -3.0 VCC/+6.2 VCC gate driver supply voltage
    • On-board adjustable deadtime generator to convert single PWM signals into independent high-side and low-side signals with deadtimes from 10 ns to 150 ns
    • Dedicated input connector for external deadtime PWM
    • Up to 1 MHz switching frequency operation
    • MMCX high frequency connector for high side GaN gate voltage measurement
    • 5.08 mm pitch for GaN drain-source voltage monitoring
    • Optional low-side shunt for transistor source current monitoring

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade WEEE Compliant Longevity Commitment Longevity Starting Date Material Declaration**
STEVAL-G0707TOCB
Active
CARD Industrial Ecopack2 Yes - -

STEVAL-G0707TOCB

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CARD

Material Declaration**:

Marketing Status

Active

Package

CARD

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STEVAL-G0707TOCB Active

Budgetary Price (US$)*/Qty:
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ECCN (EU):

Part Number:

STEVAL-G0707TOCB

Supplier:

ST

Core Product:

SGT070R70HTO, STGAP2GSNCTR

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-

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors