Product overview
Description
The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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All features
- Very low collector-emitter saturation voltage
- Fast switching speed
- High current gain characteristic
- Surface mounting device in medium power SOT-223 package
EDA Symbols, Footprints and 3D Models
STMicroelectronics - 2STN2540
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3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| 2STN2540 | Active Product is in volume production. | SOT-223 | Industrial | Ecopack2 | - | - |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Budgetary Price (US$)*/Qty | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2STN2540 | 2 distributors | Active | SOT-223 | Tape and Reel | SINGAPORE | EAR99 | NEC | - | - | |
Buy Direct at ST (*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors