Product overview
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.
Co-packed with the IGBT a silicon carbide diode has been adopted. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature. Based on technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC and LLC.
-
All features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low VCE(sat) = 1.6 V (typ.) @ IC = 50 A
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
- Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration
- Excellent switching performance thanks to the extra driving kelvin pin
EDA Symbols, Footprints and 3D Models
STMicroelectronics - GH50H65DWB2-7AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models