SCT018H65G3-7

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Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

  • All features

    • Very fast and robust intrinsic body diode
    • Very low RDS(on) over the entire temperature range
    • High speed switching performances
    • Source sensing pin for increased efficiency

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCT018H65G3-7

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCT018H65G3-7
Active
H2PAK-7 Automotive Ecopack1

SCT018H65G3-7

Package:

H2PAK-7

Material Declaration**:

Marketing Status

Active

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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SCT018H65G3-7
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SCT018H65G3-7 Active

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SCT018H65G3-7

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors